

Silicon carbide pots and tanks (reaction bonded SiSiC / recrystallized RSiC) are produced from high-purity silicon carbide fine powder via precision slip casting and high-temperature sintering. They deliver high thermal conductivity, extreme acid/alkali corrosion resistance, high strength, and dimensional stability.
| Parameter | Specification |
|---|---|
| Material | Reaction Bonded (SiSiC) / Recrystallized (RSiC) |
| Max Service Temp | 1380°C ~ 1650°C |
| Bulk Density | 2.70 ~ 3.05 g/cm³ |
| Cold Crushing Strength | ≥ 120 ~ 250 MPa |
| Thermal Conductivity (1000℃) | ≥ 30 ~ 45 W/(m·K) |
| Corrosion Resistance | Resistant to strong acids, alkalis, and molten salts |
Silicon Carbide (SiC) Pots and Tanks are high-performance structural ceramic vessels. With a Mohs hardness of 9.2~9.5 (second only to diamond and boron carbide), they possess exceptional wear resistance and chemical inertness.
In hot concentrated acids, alkalis, and molten salt environments, SiC exhibits extraordinary resistance against corrosive attack. Moreover, its thermal conductivity is 5 to 10 times higher than conventional oxide refractories, facilitating rapid, uniform heat exchange and shortening reaction/crystallization cycles.
| Index | Unit | Reaction Bonded SiC (SiSiC) | Recrystallized SiC (RSiC) |
|---|---|---|---|
| SiC Content | % | ≥ 88 | ≥ 98 |
| Bulk Density | g/cm³ | ≥ 3.02 | ≥ 2.70 |
| Apparent Porosity | % | ≤ 0.5 | ≤ 15 |
| Cold MOR | MPa | ≥ 250 | ≥ 90 |
| High Temp MOR (1200℃/1400℃) | MPa | ≥ 280 (1200℃) | ≥ 100 (1400℃) |
| Max Service Temp | ℃ | 1380 | 1650 |
| Thermal Conductivity (1000℃) | W/(m·K) | ≥ 42 | ≥ 30 |
| Thermal Shock Cycles (1100℃ water quench) | Cycles | ≥ 30 | ≥ 35 |